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深圳市国王科技有限公司

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佛山办事处

地址:佛山市顺德区伦教镇保利中央公园17栋2902

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宁波办事处

地址:宁波市江北区江北大道1228号创新大厦716室

联系人:程生    联系电话:17722437896


Silicon carbide

Shenzhen Basic Semiconductor Co., Ltd. is a leading enterprise in China's third-generation semiconductor industry, specializing in the R&D and industrialization of silicon carbide power devices. It has R&D centers in Nanshan, Shenzhen, Pingshan, Nanjing, Pukou, Stockholm, Sweden, and Nagoya, Japan. The company has an international R & D team, the core members are composed of doctors from well-known universities such as Cambridge University, Royal Institute of Technology, Tsinghua University, etc.

Basic Semiconductor has mastered the world’s leading silicon carbide core technology, researched and developed the entire industry chain covering silicon carbide power devices such as material preparation, chip design, manufacturing technology, packaging and testing, and drive applications. It has successively launched full current and voltage grade silicon carbide Schottky diodes, The first domestically produced 1200V silicon carbide MOSFET, automotive-grade full silicon carbide power module and other series products that have passed the industrial-grade reliability test. The performance has reached the international advanced level. It is used in new energy, electric vehicles, smart grids, rail transit, industrial control, Defense military industry and other fields.

Basic Semiconductor has successively participated in the launch of the "Guangdong Future Communication High-end Device Innovation Center" and the "Shenzhen Third Generation Semiconductor Research Institute", and was approved by the China Association for Science and Technology Industry-University-Research Convergence Technology Innovation Service System Third Generation Semiconductor Collaborative Innovation Center. "Core" outstanding technological innovation product award, the first prize of the professional competition of China Innovation and Entrepreneurship Competition and other honors.


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